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918413 |
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20140225123800.0 |
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050610s2003 nz a f bm 000 0 eng d |
| 035 |
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|a (OCoLC)156759080
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| 040 |
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|a CU
|c CU
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| 097 |
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|3 Bib#:
|a 918413
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| 100 |
1 |
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|a Liem, Suk Ing.
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| 245 |
1 |
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|a Influence of ion energy on the reactive ion etching induced optical damage and annealing of gallium nitride :
|b a thesis submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Physics in the University of Canterbury /
|c by Suk Ing Liem.
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| 260 |
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|c 2003.
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| 300 |
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|a x, 207 p. :
|b ill. (some col.) ;
|c 30 cm.
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| 500 |
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|a Typescript (photocopy).
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| 502 |
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|a Thesis (Ph. D.)--University of Canterbury, 2003.
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| 504 |
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|a Includes bibliographical references (p. 201-207).
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| 650 |
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|a Gallium nitride
|x Defects.
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| 650 |
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0 |
|a Gallium nitride
|x Etching.
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| 650 |
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0 |
|a Ion beam lithography
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| 650 |
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0 |
|a Photoluminescence.
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| 856 |
4 |
1 |
|u http://hdl.handle.net/10092/5706
|y Connect to electronic version
|t 0
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| 991 |
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|a 2005-06-09
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| 992 |
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|a Created by julew, 09/06/2005. Updated by alte, 25/02/2014.
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| 999 |
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|i a754f11d-f767-58bb-8303-2205aef5442a
|s f838871f-1c5a-5f7b-9590-3b1df10c0dbb
|t 0
|
| 952 |
f |
f |
|p Library use only
|a University Of Canterbury
|b Storage
|c MB Warehouse
|d Macmillan Brown Library Storage, Thesis Collection, Request for use in MB Library
|t 0
|e Thesis (Physics)
|h Local
|i Thesis
|m AU12227714B
|
