Silicon carbide power devices / B. Jayant Baliga.

Saved in:

Bibliographic Details
Published:	Hackensack, N.J. : World Scientific, c2005.
Main Author:	Baliga, B. Jayant, 1948-
Subjects:	Power semiconductors. Silicon carbide > Electric properties.
Format:	Book

Silicon carbide power devices /

Similar Items

SiC materials and devices /
Published: (2006)

SiC power materials : devices and applications /
Published: (2004)

Properties of silicon carbide /
Published: (1995)

Silicon carbide devices in high efficiency DC-DC power converters for telecommunications a thesis submitted for the degree of Doctor of Philosophy in Electrical and Electronic Engineering at the University of Canterbury, Christchurch, New Zealand /
by: Shillington, Rory Brendan
Published: (2012)

Wide-bandgap semiconductors for high-power, high-frequency, and high temparture applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A. /
Published: (1999)

Fundamentals of power semiconductor devices /
by: Baliga, B. Jayant, 1948-
Published: (2008)

Properties of porous silicon /
Published: (1997)

Thin-film silicon solar cells /
Published: (2010)

Cemented carbides /
by: Schwarzkopf, Paul
Published: (1960)

Properties of silicon germanium and SiGe:Carbon /
Published: (2000)

Silicon RF power MOSFETS /
by: Baliga, B. Jayant, 1948-
Published: (2005)

Ultraclean surface processing of silicon wafers : secrets of VLSI manufacturing /
Published: (1998)

Light emission in silicon : from physics to devices /
Published: (1998)

Properties of semiconductor alloys : group-IV, III-V and II-VI semiconductors /
by: Adachi, Sadao, 1950-
Published: (2009)

Technology and applications of amorphous silicon /
Published: (2000)

Silicon micromachining /
by: Elwenspoek, M. (Miko), 1948-
Published: (1998)

Silicon-on-insulator technology : materials to VLSI /
by: Colinge, Jean-Pierre
Published: (1991)

Modern power devices /
by: Baliga, B. Jayant, 1948-
Published: (1987)

Oxide reliability : a summary of silicon oxide wearout, breakdown, and reliability /
Published: (2002)

Semiconductor devices in power engineering : a symposium held at Woolwich Polytechnic /
Published: (1968)

Calcium carbide (graded sizes).
Published: (1951)

Power electronics : devices, drivers and applications /
by: Williams, B. W.
Published: (1986)

Properties of amorphous silicon and its alloys /
Published: (1998)

Turning tools with carbide tips : internal tools.
Published: (1975)

Silicon nitride for microelectronic applications /
by: Milek, John T. (John Theophil), 1915-
Published: (1971)

Characterization in silicon processing
by: Strausser, Yale
Published: (2010)

Abrasive grains and crudes : chemical analysis of silicon carbide.
Published: (1999)

III-nitride semiconductors and their modern devices /
Published: (2013)

Silicon sensors and circuits : on-chip compatibility /
Published: (1996)

Hydrogenated amorphous silicon /
by: Street, R. A.
Published: (1991)

Breakdown phenomena in semiconductors and semiconductor devices /
by: Levinshteĭn, M. E. (Mikhail Efimovich)
Published: (2005)

Power electronic modules : design and manufacture /
by: Sheng, William W.
Published: (2005)

Physical limitations of semiconductor devices /
by: Vashchenko, V. A.
Published: (2008)

Semiconductor devices : pioneering papers /
Published: (1991)

Amorphous and nanocrystalline silicon-based films -- 2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A. /
Published: (2003)

Semiconductor devices : basic principles /
by: Singh, Jasprit
Published: (2001)

Physics of semiconductor devices /
by: Sze, S. M., 1936-
Published: (1981)

Semiconductor device fundamentals /
by: Pierret, Robert F.
Published: (1996)

Physics of semiconductor devices /
by: Sze, S. M., 1936-
Published: (2007)

Semiconductor devices /
by: Kano, Kanaan
Published: (1998)