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1009971 |
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20060503142600.0 |
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060224s2005 njua b 001 0 eng d |
| 097 |
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|3 Bib#:
|a 1009971
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|a 9812566058
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3 |
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|a 9789812566058
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| 035 |
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|a 10692160
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| 035 |
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|a (OCoLC)ocm64712262
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| 035 |
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|a (BNAtoc)B5769505
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|a (OCoLC)64712262
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|a OCoLC
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|a UW1A
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|a TK7871.99.S55
|b B35 2005
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| 082 |
0 |
4 |
|a 621.3815/2
|2 22
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| 100 |
1 |
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|a Baliga, B. Jayant,
|d 1948-
|
| 245 |
1 |
0 |
|a Silicon carbide power devices /
|c B. Jayant Baliga.
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| 260 |
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|a Hackensack, N.J. :
|b World Scientific,
|c c2005.
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| 300 |
|
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|a xxi, 503 p. :
|b ill. (some col.) ;
|c 24 cm.
|
| 504 |
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|a Includes bibliographical references and index.
|
| 505 |
0 |
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|g Ch. 1.
|t Introduction --
|g Ch. 2.
|t Material properties and technology --
|g Ch. 3.
|t Breakdown voltage --
|g Ch. 4.
|t PiN rectifiers --
|g Ch. 5.
|t Schottky rectifiers --
|g Ch. 6.
|t Shielded Schottky rectifiers --
|g Ch. 7.
|t Metal-semiconductor field effect transistors --
|g Ch. 8.
|t The Baliga-Pair configuration --
|g Ch. 9.
|t Planar power MOSFETs --
|g Ch. 10.
|t Shielded planar MOSFETs --
|g Ch. 11.
|t Trench-gate power MOSFETs --
|g Ch. 12.
|t Shielded trench-gate power MOSFETs --
|g Ch. 13.
|t Charge coupled structures --
|g Ch. 14.
|t Integral diodes --
|g Ch. 15.
|t Lateral high voltage FETs --
|g Ch. 16.
|t Synopsis.
|
| 592 |
|
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|a COPYRIGHT OCLC 1978-2006.
|
| 650 |
|
0 |
|a Power semiconductors.
|
| 650 |
|
0 |
|a Silicon carbide
|x Electric properties.
|
| 991 |
|
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|a 2006-05-03
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| 992 |
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|a Created by julew, 03/05/2006. Updated by , .
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| 999 |
f |
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|i 51261ab6-1f6d-5ce5-941a-2a81015ea952
|s 9bdd06de-c48a-5120-994e-aad3a44e653b
|t 0
|
| 952 |
f |
f |
|p For loan
|a University Of Canterbury
|b UC Libraries
|c EPS Library
|d EPS Library, Level 3
|t 0
|e TK 7871.99 .S55 .B186 2005
|h Library of Congress classification
|i Book
|m AU13249673B
|
