Semiconductor defect engineering--materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A. / editors, S. Ashok ... [et al.].

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Bibliographic Details
Published: Warrendale, Pa. : Materials Research Society, c2005.
Corporate Authors:
Materials Research Society. Meeting
Symposium on Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices
Other Authors:
Ashok, S.
Series:Materials Research Society symposia proceedings ; v. 864.
Subjects:
Semiconductors > Materials > Congresses.
Semiconductor doping > Congresses.
Format: Conference Proceeding Book
Semiconductor defect engineering--materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A. /
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245 0 0 |a Semiconductor defect engineering--materials, synthetic structures and devices :  |b symposium held March 28-April 1, 2005, San Francisco, California, U.S.A. /  |c editors, S. Ashok ... [et al.]. 
260 |a Warrendale, Pa. :  |b Materials Research Society,  |c c2005. 
300 |a xvii, 605 p. :  |b ill. ;  |c 24 cm. 
490 1 |a Materials Research Society symposium proceedings ;  |v v. 864 
500 |a "This volume results from Symposium E, 'Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices,' held March 28-April 1 at the 2005 MRS Spring Meeting in San Francisco, California."--Pref. 
504 |a Includes bibliographical references and indexes. 
505 0 0 |t Grown-in and radiation-induced defects in 4H-SiC /  |r T. A. G. Eberlein, R. Jones, P. R. Briddon and S. Oberg --  |t A study of V[superscript 3+] and the vanadium acceptor level in semi-insulating 6H-SiC /  |r Wonwoo Lee and Mary E. Zvanut --  |t Role of the substrate doping in the activation of Fe[superscript 2+] centers in Fe implanted InP /  |r T. Cesca, A. Gasparotto, G. Mattei, A. Verna, B. Fraboni, G. Impellizzeri and F. Priolo --  |t Growth and electrical properties of ZnO grown by closed space vapor transport on sapphire substrates /  |r J. Mimila-Arroyo, J. F. Rommeluere, M. Barbe, F. Jomard, A. Tromson-Carli, O. Gorochov, Y. Marfaing and P. Galtier --  |t Chromium diffusion doping of commercial ZnSe and CdTe windows for mid-infrared solid-state laser applications /  |r U. Hommerich, I. K. Jones, EiEi Nyein and S. B. Trivedi --  |t Structural and optical properties of thin metal-oxide films (ZnO and SnO[subscript x]) deposited on glass and silicon substrates /  |r Serekbol Zh. Tokmoldin, Bulat N. Mukashev, Nurzhan B. Beisenkhanov, Azamat B. Aimagambetov and Irina V. Ovcharenko --  |t Structural characterization of GaN epilayers grown on patterned sapphire substrates /  |r Chang-Soo Kim, Ji-Hyun Moon, Sang-Jun Lee, Sam-Kyu Noh, Je Won Kim, Kyuhan Lee, Yong Dae Choi and Jay P. Song --  |t Effect of substrate orientation on the growth rate and surface morphology on GaSb grown by metal-organic vapor phase epitaxy /  |r Jian Yu and Ishwara B. Bhat --  |t Pt[subscript s]-O[subscript 1] complex formation in platinum diffused silicon /  |r Wilfried Vervisch, Laurent Ventura, Bernard Pichaud, Gerard Ducreux and Andre Lhorte --  |t Diffusion of fluorine-silicon interstitial complex in crystalline silicon /  |r Scott A. Harrison, Thomas F. Edgar and Gyeong S. Hwang --  |t Impacts of back surface conditions on the behavior of oxygen in heavily arsenic doped czochralski silicon wafers /  |r Q. Wang, Manmohan Daggubati, Hossein Paravi, Rong Yu and Xiao Feng Zhang --  |t Influence of oxygen vacancies and strain on electronic reliability of SiO[subscript 2-x] films /  |r Ken Suzuki, Yuta Ito, Hideo Miura and Tetsuo Shoji --  |t Identification and characterization of submicron defects for semiconductor processing /  |r Wei Liu, Aime Fausz, John Svoboda, Brian Butcher, Rick Williams and Steve Schauer --  |t Experimental observation of formation processes in Si/SiO[subscript 2] interface defects using in situ UHV-ESR system /  |r N. Mizuochi, W. Futako and S. Yamasaki --  |t Efficient detection of oxygen vacancy double donors in capacitors with ultra-thin Ta[subscript 2]O[subscript 5] films for DRAM applications by zero-bias thermally stimulated current spectroscopy /  |r W. S. Lau, L. Zhong, Taejoon Han and Nathan P. Sandler --  |t Investigation of GaNAsSb/GaAs and GaInNAsSb/GaNAs/GaAs band offsets /  |r Homan B. Yuen, Robert Kudrawiec, K. Ryczko, S. R. Bank, M. A. Wistey, H. P. Bae, J. Misiewicz and J. S. Harris, Jr. --  |t Ultra-shallow junctions for the 65 nm node based on defect and stress engineering /  |r Victor Moroz, Majeed Foad, Houda Graoui, Faran Nouri, Dipu Pramanik and Susan Felch --  |t N+/P and P+/N junctions in strained Si on strain relaxed SiGe buffers : the effect of defect density and layer structure /  |r G. Eneman, E. Simoen, R. Delhougne, P. Verheyen, M. Ries, R. Loo, M. Caymax, W. Vandervorst and K. De Meyer --  |t Morphology, defects and thermal stability of SiGe grown on SOI /  |r Qianghua Xie, Mike Kottke, Xiangdong Wang, Mike Canonico, Ted White, Bich-Yen Nguyen, Alex Barr, Shawn Thomas and Ran Liu --  |t Characterization of ultrathin strained-Si channel layers of n-MOSFETs using transmission electron microscopy /  |r Dalaver H. Anjum, Jian Li, Guangrui Xia, Judy L. Hoyt and Robert Hull --  |t Point defects interaction with extended defects and impurities and its influence on the Si-SiO[subscript 2] system properties /  |r D. Kropman, U. Abru, T. Karner, U. Ugaste, E. Mellikov, M. Kauk, I. Heinmaa and A. Samoson --  |t Si[subscript 3]H[subscript 8] based epitaxy of biaxially stressed silicon films doped with carbon and arsenic for CMOS applications /  |r M. Bauer, S. Zollner, N. D. Theodore, M. Canonico, P. Tomasini, B.-Y. Nguyen and C. Arena --  |t Electrical transient based defect spectroscopy in polymeric and organic semiconductors /  |r Y. N. Mohapatra, V. Varshney, V. Rao, Samarendra P. Singh and G. S. Samal --  |t Towards the routine fabrication of P in Si nanostructures : understanding P precursor molecules on Si(001) /  |r Steven R. Schofield, Neil J. Curson, Oliver Warschkow, Nigel A. Marks, Hugh F. Wilson, Michelle Y. Simmons, Phillip V. Smith, Marian W. Radny and David R. McKenzie --  |t Effect of ohmic contacts on polysilicon memory effect /  |r S. B. Herner, C. Jahn and D. Kidwell --  |t Analysis of nanoscale deformation in GaAs(100) : towards patterned growth of quantum dots /  |r Curtis R. Taylor, Eric A. Stach, Ajay P. Malshe and Gregory Salamo --  |t Various methods to reduce defect states in tantalum oxide capacitors for DRAM applications /  |r W. S. Lau, G. Zhang, L. L. Leong, P. W. Qian, Taejoon Han, J. Das, Nathan P. Sandler and P. K. Chu --  |t Impact of small miscuts of (0001) sapphire on the growth of Al[subscript x]Ga[subscript 1-x]N/AlN /  |r Zheng Gong, Wenhong Sun, Jianping Zhang, Mikhail E. Gaevski, Hongmei Wang, Jinwei Yang and M. Asif Khan --  |t Radiative versus nonradiative decay processes in germanium nanocrystals probed by time-resolved photoluminescence spectroscopy /  |r P. K. Giri, R. Kesavamoorthy, B. K. Panigrahi and K. G. M. Nair --  |t Direct measurement of ion beam induced, nanoscale roughening of GaN /  |r Bentao Cui and P. I. Cohen --  |t Elastic stress relaxation at nanoscale : a comprehensive theoretical and experimental investigation of the dislocation loops associated with As-Sb nanoclusters in GaAs /  |r V. V. Chaldyshev, A. L. Kolesnikova, N. A. Bert and A. E. Romanov --  |t Infrared spectroscopy of impurities in ZnO nanoparticles /  |r W. M. Hlaing Oo and M. D. McCluskey --  |t Electronically stimulated degradation of crystalline silicon solar cells /  |r J. Schmidt, K. Bothe, D. Macdonald, J. Adey, R. Jones and D. W. Palmer --  |t Efficiency limitations of multicrystalline silicon solar cells due to defect clusters /  |r Bhushan Sopori, Chuan Li, S. Narayanan and D. Carlson --  |t Silicon wafer defect self-characterization with CCD image sensors /  |r William C. McColgin, Alexa M. Perry, Dean J. Seidler and James P. Lavine --  |t Silicon light emissions from boron implant-induced extended defects /  |r G. Z. Pan, R. P. Ostroumov, L. P. Ren, Y. G. Lian and K. L. Wang --  |t Conductivity enhancement in thin silicon-on-insulator layer embedding artificial dislocation network /  |r Yasuhiko Ishikawa, Kazuaki Yamauchi, Chihiro Yamamoto and Michiharu Tabe --  |t Silicon single-electron pump and turnstile : interplay with crystalline imperfections /  |r Yukinori Ono, Akira Fujiwara, Yasuo Takahashi and Hiroshi Inokawa --  |t A comparison of lattice-matched GaInNAs and metamorphic InGaAs photodetector devices /  |r David B. Jackrel, Homan B. Yuen, Seth R. Bank, Mark A. Wistey, Xiaojun Yu, Junxian Fu, Zhilong Rao and James S. Harris, Jr. --  |t A novel method to synthesize blue-luminescent doped GaN powders /  |r R. Garcia, A. Thomas, A. Bell and F. A. Ponce --  |t Modeling the MOS device conductance using an extended tunneling model and subsequent determination of interface traps /  |r N. Konofaos --  |t Transmission electron microscopy studies of strained Si CMOS /  |r Qianghua Xie, Peter Fejes, Mike Kottke, Xiangdong Wang, Mike Canonico, David Theodore, Ted White, Mariam Sadaka, Victor Vartanian, Aaron Thean, Bich-Yen Nguyen, Alex Barr, Shawn Thomas and Ran Liu --  |t The electrical phenomena of non-planar structure and devices using plasma doping /  |r Jong-Heon Yang, In-Bok Back, Kiju Im, Chang-Geun Ahn, Sungkweon Baek, Won-ju Cho and Seongjae Lee --  |t A new post annealing method for AlGaN/GaN heterostructure field-effect transistors employing XeCl excimer laser pulses /  |r Min-Woo Ha, Seung-Chul Lee, Joong-Hyun Park, Kwang-Seok Seo and Min-Koo Han --  |t P-N junction diodes fabricated based on donor formation in plasma hydrogenated P-type czochralski silicon /  |r Y. L. Huang, E. Simoen, R. Job, C. Claeys, W. Dungen, Y. Ma, W. R. Fahrner, J. Versluys and P. Clauws -- 
505 8 0 |t Defect reduction in Si-based metal-semiconductor-metal photodetectors with cryogenic processed schottky contacts /  |r M. Li and W. A. Anderson --  |t Low temperature B activation in SOI using optimized vacancy engineering implants /  |r A. J. Smith, B. Colombeau, N. Bennett, R. Gwilliam, N. Cowern and B. Sealy --  |t Bubbles and cavities induced by rare gas implantation in silicon oxide /  |r E. Ntsoenzok, H. Assaf and M. O. Ruault --  |t Defects induced by helium implantation : impact on boron diffusivity /  |r F. Cayrel, D. Alquier, C. Dubois and R. Jerisian --  |t Roles of impurities and implantation depth on He[superscript +]- cavity shape in silicon /  |r Gabrielle Regula, Rachid El Bouayadi, Maryse Lancin, Esidor Ntsoenzok, Bernard Pichaud and Marie-Odile Ruault --  |t Clustering analysis in boron and phosphorus implanted (100) germanium by X-ray absorption spectroscopy /  |r M. Alper Sahiner, Parviz Ansari, Malcolm S. Carroll, C. A. King, Y. S. Suh, R. A. Levy, Temel Buyuklimanli and Mark Croft --  |t Electronic and optical properties of energetic particle-irradiated in-rich InGaN /  |r S. X. Li, K. M. Yu, R. E. Jones, J. Wu, W. Walukiewicz, J. W. Ager III, W. Shan, E. E. Haller, Hai Lu, William J. Schaff and W. Kemp --  |t Controlled growth of ZnO films on Si substrate and N-doping behavior /  |r Y. F. Mei, Ricky K. Y. Fu, R. S. Wang, K. W. Wong, H. C. Ong, L. Ding, W. K. Ge, G. G. Siu and Paul K. Chu --  |t Solid phase recrystallization and strain relaxation in ion-implanted strained Si in SiGe heterostructures /  |r M. S. Phen, R. T. Crosby, V. Craciun, K. S. Jones, M. E. Law, J. L. Hansen and A. N. Larsen --  |t Device parametric shift mechanism caused by boron halo redistribution resulting from dose rate dependence of SDE implant /  |r Ukyo Jeong, Jinning Liu, Baonian Guo, Kyuha Shim and Sandeep Mehta --  |t Theoretical investigation of formation of (n-n[superscript +])-junction in ion-implanted crystalline matrix /  |r R. Peleshchak, O. Kuzyk and H. Khlyap --  |t Fabrication of silicon carbide PIN diodes by laser doping and planar edge termination by laser metallization /  |r Z. Tian, N. R. Quick and A. Kar --  |t Nanoindentation as a tool for formation of thin film-based barrier structures /  |r H. Khlyap and P. Sydorchuk --  |t Blistering and splitting in hydrogen-implanted silicon /  |r E. Ntsoenzok, H. Assaf and S. Ashok --  |t Mutual passivation in dilute GaN[subscript x]As[subscript 1-x] alloys /  |r K. M. Yu, W. Walukiewicz, J. Wu, D. E. Mars, M. A. Scarpulla, O. D. Dubon, M. C. Ridgway and J. F. Geisz --  |t Determination of diffusivities of Si self-diffusion and Si self-interstitials using isotopically enriched single-or multi- [superscript 30]Si epitaxial layers /  |r S. Matsumoto, S. R. Aid, T. Sakaguchi, K. Toyonaga, Y. Nakabayashi, M. Sakuraba, Y. Shimamune, Y. Hashiba, J. Murota, K. Wada and T. Abe --  |t Role of interstitials in as TED and clustering in crystalline silicon /  |r Scott A. Harrison, Thomas F. Edgar and Gyeong S. Hwang --  |t Effects of silicon nitride passivation layer on mean dark current and quantum efficiency of CMOS active pixel sensors /  |r D. Benoit, P. Morin, M. Cohen, P. Bulkin and J. L. Regolini --  |t Compositional changes in the infrared optical properties of Cr doped CdZnTe crystals /  |r U. Hommerich, A. G. Bluiett, EiEi Nyein, S. B. Trivedi and R. T. Shah --  |t Ab initio studies of electronic structure of defects in PbTe /  |r Salameh Ahmad, Daniel Bilc, S. D. Mahanti and M. G. Kanatzidis --  |t Thermal growth of He-cavities in Si studied by cascade implantation /  |r E. Ntsoenzok, R. El Bouayadi, G. Regula, B. Pichaud and S. Ashok --  |t The role of surface annihilation in annealing investigated by atomic model simulation /  |r Min Yu, Xiao Zhang, Ru Huang, Xing Zhang, Yangyuan Wang, Jinyu Zhang and Hideki Oka --  |t General model of diffusion of interstitial oxygen in silicon and germanium crystals /  |r Vasilii Gusakov --  |t Barrier to migration of the intrinsic defects in silicon in different charged system using first-principles calculations /  |r Jinyu Zhang, Yoshio Ashizawa and Hideki Oka --  |t Void formation in hydrogen implanted and subsequently plasma hydrogenated and annealed czochralski silicon /  |r R. Job, W. Dungen, Y. Ma, Y. L. Huang and J. T. Horstmann --  |t Hydrogen donors in ZnO /  |r M. D. McCluskey, S. J. Jokela and W. M. Hlaing Oo --  |t [mu]-Raman spectra analysis of the evolution of hydrogen related defects and void formation in the silicon ion-cut process /  |r W. Dungen, R. Job, Y. Ma, Y. L. Huang, W. R. Fahrner, L. O. Keller and J. T. Horstmann --  |t Hydrogen diffusion in boron-doped hydrogenated amorphous silicon films : crystallization and induced structural changes /  |r F. Kail, A. Hadjadj and P. Roca i Cabarrocas --  |t Mechanism of dopant activation enhancement in shallow junctions by hydrogen /  |r A. Vengurlekar, S. Ashok, Christine E. Kalnas and H. Win Ye --  |t Hydrogen ion implantation caused defect structures in heavily doped silicon substrates /  |r Minhua Li and Q. Wang --  |t Thermal transformation of hydrogen bonds in a-SiC:H films : structural and optical properties /  |r Andrey V. Vasin, Sergey P. Kolesnik, Andrey A. Konchits, Vladimir S. Lysenko, Alexey N. Nazarov, Andrey V. Rusavsky and S. Ashok --  |t Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma /  |r H. D. Nam, J. D. Song, W. J. Choi, J. I. Lee and H. S. Yang --  |t Three dimensional hydrogen microscopy in diamond /  |r Gunther Dollinger, Patrick Reichart, Andreas Bergmaier, Andreas Hauptner and Christoph Wild --  |t Nondestructive electrical defect characterization and topography of silicon wafers and epitaxial layers /  |r K. Dornich, T. Hahn and J. R. Niklas --  |t A pulsed EDMR study of charge trapping at Pb centers /  |r Christoph Boehme, Felice Friedrich and Klaus Lips --  |t Transmission electron microscopy study of nonpolar a-plane GaN grown by pendeo-epitaxy on (1120) 4H-SiC /  |r D. N. Zakharov, Z. Liliental-Weber, B. Wagner, Z. J. Reitmeier, E. A. Preble and R. F. Davis --  |t Defect characterization of CdTe bulk crystals doped with heavy elements and rare earths /  |r Svetlana Neretina, N. V. Sochinskii, Peter Mascher and E. Saucedo --  |t Contact free defect investigation in as grown Fe-doped SI-InP /  |r Sabrina Hahn, Kay Dornich, Torsten Hahn, Bianca Grundig-Wendrock, Jurgen R. Niklas, Peter Schwesig and Georg Muller --  |t Effect of deuterium diffusion on the electrical properties of AlGaN/GaN heterostructures /  |r Jaime Mimila Arroyo, Michel Barbe, Francois Jomard, Dominique Ballutaud and Jacques Chevallier --  |t Photoelectron emission technique for the surface analysis of silicon wafer covered with oxide film /  |r Takao Sakurai, Yoshihiro Momose, Masanori Kudou and Keiji Nakayama --  |t Probing process-induced defects in Si using infrared photoelastic stress measurement technique /  |r X. H. Liu, S. P. Wong, H. J. Peng, N. Ke and Shounan Zhao. 
650 0 |a Semiconductors  |x Materials  |v Congresses. 
650 0 |a Semiconductor doping  |x Congresses. 
700 1 |a Ashok, S. 
710 2 |a Materials Research Society.  |b Meeting  |d (2005 :  |c San Francisco, Calif.) 
711 2 |a Symposium on Semiconductor Defect Engineering--Materials, Synthetic Structures and Devices  |d (2005 :  |c Francisco, Calif.) 
830 0 |a Materials Research Society symposia proceedings ;  |v v. 864. 
949 |b AU13127667B  |c eb3  |d TK 7871.85 .S4711 2005  |l e 

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